Selective spacer formation on transistors of different classes on the same device
作者： Ian R. Post , Chia-Hong Jan , Giuseppe Curello , Mark Bohr
DOI:
关键词:
摘要: A method of selectively forming a spacer on first class transistors and devices formed by such methods. The can include depositing conformal deposition layer substrate with different classes situated thereon, blocking to at least one transistors, dry etching the layer, removing second substrate, wet remaining layer. Devices may larger spacers compared class.
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