Solid state image sensor having an unnecessary electric charge exhausting section formed adjacent to a horizontal electric charge transfer section, and a method for manufacturing the same

摘要: A solid state image sensor having an unnecessary electric charge exhausting section formed adjacent to a horizontal transfer section, comprises N −− semiconductor substrate 1 P-well layer 2 on principal surface thereof. On the 2, there is one end of each number vertical sections. channel 15 and barrier region 5 are N-type region, storing 6 + region. potential 11 at side opposite The constituted ++ section. simultaneously have same impurity concentration.