Stochastic Transport in a Disordered Solid. II. Impurity Conduction

摘要: In a previous paper, the authors have developed general theory of stochastic transport in disordered systems. present is applied, detail, to prototype system - impurity conduction semiconductors. The complete frequency dependence real and imaginary part conductivity calculated. particular, calculation details transition from an ${\ensuremath{\omega}}^{s}$ essentially dc behavior (at finite frequency), where $s\ensuremath{\sim}0.6\ensuremath{-}0.8$, depending on temperature concentration. theoretical results for frequency, temperature, concentration are shown be good agreement with measurements Pollak Geballe (PG). addition, ac data PG interpreted yield experimental evidence existence two-channel hopping $n$-type Si.