Enhancing nonvolatile write-once-read-many-times memory effects with SiO2 nanoparticles sandwiched by poly(N-vinylcarbazole) layers
作者： Xianhai Xia , Xiangmei Liu , Mingdong Yi , Quli Fan , Lianhui Wang
DOI: 10.1088/0022-3727/45/21/215101
关键词:
摘要: A nonvolatile write-once-read-many-times (WORM) memory device based on the ITO/poly(N-vinylcarbazole) (PVK)/SiO2 nanoparticles (SiO2 NPs)/PVK/Al structure is demonstrated. By employing SiO2 NPs, ON/OFF current ratio of enlarged from 20 to 7 × 102 at a low voltage, and shows obvious negative differential resistance (NDR) phenomenon high electric field. Compared with ITO/PVK/Al ITO/PVK/PVK/Al devices, it found that size NPs sandwiched between two PVK layers plays an important role in enhancing reproducibility ON state retention time WORM device. The mechanisms are investigated basis current–voltage (I–V) characteristics scanning electron microscopy image. Here, strength NDR effect our devices only related charge defects traps films, can be by embedding into films.
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