High temperature, high deposition rate process and apparatus for depositing titanium layers

摘要: The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a tetrachloride source. In accordance with an embodiment of the invention, ceramic heater assembly integrated RF plane bottom powered capability allows PECVD deposition temperature least 400° C. more efficient plasma treatment. A thermal choke isolates its support shaft, reducing gradient across reduce risk breakage improving uniformity heater. system incorporates flow restrictor ring other features that allow 15 liters/minute rate through chamber minimal backside minimized chamber, thereby frequency cleanings, clean time seasoning. Deposition processes are also further embodiments invention.