作者: H. Zirath , T. Masuda , R. Kozhuharov , M. Ferndahl
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摘要: Recent results from a Swedish program for development of 60-GHz monolithic microwave integrated circuits (MMICs) high-data-rate communication links are presented. Front-end such as mixers, amplifiers, frequency multipliers, IF amplifiers with gain control, and voltage-controlled oscillators (VCOs) have been realized utilizing GaAs PHEMT MHEMT technologies. A newly developed 7.5-GHz coupled Colpitt VCO shows minimum phase noise -95 dBc at 100 kHz offset. second-harmonic 14-GHz less than -90 kHz. novel balanced 7-28-GHz MMIC quadrupler is described compared single-ended the same input frequencies. To demonstrate its feasibility potential application, combined output characteristics resulting 30-GHz source measured. three-stage wide-band amplifier covering 43-64 GHz 24 dB, figure 2.5 passband ripple 2 dB also described. In future systems mass markets where cost utmost importance, Si-based technologies, especially CMOS, highly interesting. Some recent circuit based on 90-nm CMOS technology reported.