Switchable Junction with Intrinsic Diode
作者： Dmitri Borisovich Strukov , R Stanley Williams , None
DOI:
关键词:
摘要: A switchable junction (600) with an intrinsic diode includes a first electrode (635) and second (640). memristive matrix (605) forms electrical interface (625) the which has programmable conductance. semiconductor (615) is contact rectifying (630)
lens.org 参考文章(59)
Julie Casperson Brewer, Memory and methods of forming the same to enhance scalability of non-volatile two-terminal memory cells ,(2009)
Chris M. Carlson, Dave Peterson, Vishwanath Bhat, Cunyu Yang, Praveen Vaidyanathan, Noel Rocklein, Capacitors, dielectric structures, and methods of forming dielectric structures ,(2009)
Yudi Wang, I-Wei Chen, Soo Gil Kim, Non-volatile resistance-switching oxide thin film devices ,(2007)
Young-Soo Joung, Seung-Eon Ahn, David Seo, Myoung-Jae Lee, In-kyeong Yoo, Young-Kwan Cha, Sun-Ae Seo, Nonvolatile memory device, array of nonvolatile memory devices, and methods of making the same ,(2005)
Parviz Keshtbod, Rajiv Yadav Ranjan, A multi-state spin-torque transfer magnetic random access memory ,(2009)
John Smythe, Bhaskar Srinivasan, Vapor deposition methods for forming a metal- containing layer on a substrate ,(2007)
Pragati Kumar, Tony P. Chiang, Sean Barstow, Sandra G Malhotra, Resistive-switching nonvolatile memory elements ,(2013)
R. Stanley Williams, Multi-terminal electrically actuated switch ,(2007)
Jonathan Bornstein, Robin Cheung, Travis Byonghyop Oh, Darrell Rinerson, David Hansen, Continuous plane of thin-film materials for a two-terminal cross-point memory ,(2007)
Darrell Rinerson, Philip F.S. Swab, John Sanchez, Edmond R. Ward, Steve Kuo-Ren Hsia, Wayne Kinney, Christophe J. Chevallier, Steven W. Longcor, Multi-resistive state memory device with conductive oxide electrodes ,(2009)