Ferroelectric thin-film capacitor
作者： Yasushiro Nishioka
DOI:
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摘要: A method for making a ferroelectric thin film capacitor. Ti adhesive layer is formed on silicon substrate covered with oxide layer. On this, Pt deposited as lower capacitor electrode, over which of high permittivity, such crystallized BST film, by sputtering. Then an upper electrode the sputtering to form Finally, heat-treated in oxidizing atmosphere eliminate any leakage holes, that cause current, caused
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