Spacer integration scheme in mram technology
作者： Igor Kasko , Frank Findeis , John Hummel , Kia-Seng Low , Gregory Costrini
DOI:
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摘要: A magneto resistive memory device is fabricated by etching a blanket metal stack comprised of buffer layer, pinned magnetic tunnel barrier layer and free layer. The problem junction shorting from resputtered during the process eliminated formation protective spacer covering side freelayer interface. formed following first etch through which stops on After second made to isolate device. patterning using disposable mandrel method that enables self-aligned contact be completion process.
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