Electrical and optical properties of sputtered ultra-thin indium tin oxide films using xenon/argon gas
作者： F. Hamouda , E. Herth , C. David , F. Bayle , M. P. Plante
DOI: 10.1007/S10854-019-01171-W
关键词:
摘要: In this work we investigate the optical and electrical properties of sub-50 nm thick indium tin oxide (ITO) deposited by Radio Frequency magnetron sputtering technique. The effect gas, oxygen concentration substrate temperature on these was studied. ITO films were glass silicon substrates using argon or xenon gases with flow rate from 0 to 3 sccm. deposition 25 250 °C. Sub-50 nm resistivity record as $$9.0\times 10^{-4}$$ Ω cm was achieved xenon-sputtered at High transmission beyond 90% observed in range 400–800 corresponding bandgap 3.5–3.8 eV.
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