Insulative structure with diffusion break integral with isolation layer and methods to form same
作者： Frougier Julien , Xie Ruilong
DOI:
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摘要: An IC structure according to the disclosure includes an insulative overlying a substrate and set of STIs. The isolation layer contacting upper surface substrate, diffusion break region integral with extending from layer, wherein horizontally separates pair surfaces layer. A active semiconductor layers, each positioned on respective one are adjacent opposing sidewalls region. electrically layers other.
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