Characterization of Cd1−xMgxTe film and plasma diagnostic studies by optical emission spectroscopy during sputtering

摘要: Cd1−xMgxTe is an attractive II–VI semiconductor alloy candidate for obtaining energy gaps wider than 1.5 eV of CdTe needed the top junction absorber layer in a polycrystalline thin-film tandem solar cell. We have shown that these films can easily be prepared by sputtering, however, sputtering rate substantially lower and attainable cell performance has been poor, both before after activation treatments with chlorine-containing vapors. In this work we applied optical emission spectroscopy (OES) using selected peaks ArII, CdII, MgI, TeII correlated results crystallographic morphological characteristics deposited films. Results were obtained as function rf sputter power gas pressure.