Enhanced stretchability of poly(3-hexylthiophene) thin films by ion gel gate embedding
作者： Sung Won Lee , Minkwan Shin , Jaeyoon Park , Unyong Jeong
DOI: 10.1007/S13233-013-1119-1
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摘要: We investigated the stretchability of poly(3-hexylthiophene) (P3HT) thin film and its network structure. found that P3HT is less than 3% strain can be barely improved by But, ion-gel layer on could improve electrical stability up to 6%. Based results, we fabricated high-performance polymer transistors (1 cm2/Vs 10E4 on-off ratio) which are reasonably working at 10% tensile strain. Open image in new window
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