A 0.2-/spl mu/m 180-GHz-f/sub max/ 6.7-ps-ECL SOI/HRS self aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications
作者： K. Washio , E. Ohue , H. Shimamoto , K. Oda , R. Hayami
DOI: 10.1109/16.981217
关键词:
摘要: … The technology has been applied to fabricate devices on a 200-mm SOI wafer based on a … 0.35- m SiGe BiCMOS technology for wireless applications,” in BCTM Tech. Dig., 1999, pp. …
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sci-hub.se 参考文章(6)
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