Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
作者： Tadashi Shibata
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摘要: A method for manufacturing a semiconductor device of the invention comprises steps (a) forming gate insulating film on surface silicon substrate, and electrode said film; (b) self-aligned at least side wall electrode; (c) metal or silicide region which an is not formed, including source region, drain diffusion interconnection extended part one prospective regions source, regions; (d) interconnected by doping time substrate with impurity has conductivity type opposite to any after step (a).
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