Noise in Resistive Random Access Memory Devices

摘要: This chapter is arranged as a bottom-up journey through the most important noise type in emerging resistive random access memory (RRAM) devices: telegraph (RTN). In last 10 years, RRAMs have gained enormous popularity and attracted attention of many researchers industries throughout world. Studying noise, particularly RTN, such devices primary importance because it can contribute essential information about physics clarify role atomistic properties defects. Starting from basic mathematical formulation we will analyze its statistical properties, devise suitable methods to measure it. These then be employed characterize focusing on representative case HfO2-based RRAM. Detailed results provided, which physical mechanisms behind RTN give hints defects involved. addition, physics-based compact model RRAM developed, showing some opportunities that offer.