Photoluminescence properties of a quantum system consisting of different size GaAs quantum wells
作者： M Ohe , M Matsuo , T Nogami , K Fujiwara , H Okamoto
DOI: 10.1016/S0167-9317(99)00460-8
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摘要: Abstract Photoluminescence properties of a quantum system consisting four different size GaAs wells (Lz=15, 7, 4.5 and 3 nm) clad by 50-nm thick Al 0.24 Ga 0.76 As barriers have been investigated steady-state time-resolved (TR) photoluminescence (PL) experiments at 13–300 K. It is found that the low temperature PL emission energy distribution not uniform over excitonic bands from expected for thermalized carriers higher temperatures above 260 TR-PL measurements indicate non-uniform intensity observed result capture processes photoexcited carriers.
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