Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films
作者： Koji Aizawa , Eisuke Tokumitsu , Kojiro Okamoto , Hiroshi Ishiwara
DOI: 10.1063/1.126424
关键词:
摘要: An annealing method for preparing SrBi2Ta2O9 (SBT) thin films, a face-to-face method, is proposed, and its effectiveness demonstrated. In this an SBT film deposited on substrate using sol-gel technique was directly put with the side down other during crystallization process. The films were crystallized at 750 °C in oxygen flow successively annealed 400 °C 6.2 wt % ozone flow. It found that remanent polarization value (2Pr) 175-nm-thick as large 23 μC/cm2 when conducted. also from time-dependent leakage current measurement density of lower than 1×10−9 A/cm2 electric field 65 kV/cm.
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sci-hub.se 参考文章(10)
Narayan Solayappan, Gary F. Derbenwick, Larry D. Mcmillan, Carlos A. Paz De Araujo, Shinichiro Hayashi, Conformal LSMCD deposition of SrBi2(Ta1-xNbx)2O9 Integrated Ferroelectrics. ,vol. 14, pp. 237- 246 ,(1997) , 10.1080/10584589708019997
G. D. Hu, I. H. Wilson, J. B. Xu, W. Y. Cheung, S. P. Wong, H. K. Wong, Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method Applied Physics Letters. ,vol. 74, pp. 1221- 1223 ,(1999) , 10.1063/1.123505
Takashi Mihara, Hiroyuki Yoshimori, Hitoshi Watanabe, Carlos A. Paz de Araujo, Characteristics of Bismuth Layered SrBi2Ta2O9 Thin-Film Capacitors and Comparison with Pb(Zr, Ti)O3 Japanese Journal of Applied Physics. ,vol. 34, pp. 5233- 5239 ,(1995) , 10.1143/JJAP.34.5233
P. C. Joshi, S. O. Ryu, X. Zhang, S. B. Desu, Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique Applied Physics Letters. ,vol. 70, pp. 1080- 1082 ,(1997) , 10.1063/1.118485
Takehiro Noguchi, Takashi Hase, Yoichi Miyasaka, Analysis of the Dependence of Ferroelectric Properties of Strontium Bismuth Tantalate (SBT) Thin Films on the Composition and Process Temperature Japanese Journal of Applied Physics. ,vol. 35, pp. 4900- 4904 ,(1996) , 10.1143/JJAP.35.4900
Kazushi Amanuma, Takashi Hase, Yoichi Miyasaka, Preparation and ferroelectric properties of SrBi2Ta2O9 thin films Applied Physics Letters. ,vol. 66, pp. 221- 223 ,(1995) , 10.1063/1.113140
C. A-Paz de Araujo, J. D. Cuchiaro, L. D. McMillan, M. C. Scott, J. F. Scott, Fatigue-free ferroelectric capacitors with platinum electrodes Nature. ,vol. 374, pp. 627- 629 ,(1995) , 10.1038/374627A0
D. J. Taylor, R. E. Jones, P. Zurcher, P. Chu, Y. T. Lii, B. Jiang, S. J. Gillespie, Electrical properties of SrBi2Ta2O9 thin films and their temperature dependence for ferroelectric nonvolatile memory applications Applied Physics Letters. ,vol. 68, pp. 2300- 2302 ,(1996) , 10.1063/1.116170
Yasuyuki Ito, Maho Ushikubo, Seiichi Yokoyama, Hironori Matsunaga, Tsutomu Atsuki, Tadashi Yonezawa, Katsumi Ogi, New Low Temperature Processing of Sol-Gel SrBi2Ta2O9 Thin Films Japanese Journal of Applied Physics. ,vol. 35, pp. 4925- 4929 ,(1996) , 10.1143/JJAP.35.4925
Z. G. Zhang, J. S. Liu, Y. N. Wang, J. S. Zhu, F. Yan, X. B. Chen, H. M. Shen, Fatigue characteristics of SrBi2Ta2O9 thin films prepared by metalorganic decomposition Applied Physics Letters. ,vol. 73, pp. 788- 790 ,(1998) , 10.1063/1.122002