Principal Ideas of Crystal Growth

作者: E. I. Givargizov

DOI: 10.1007/978-1-4899-2560-2_1

关键词:

摘要: The major subject of this book, artificial epitaxy, represents a part the more general phenomenon i.e., oriented overgrowth one material on another. In turn, epitaxy is that branch science termed “growth (or formation) crystals.” Between these two “levels,” there exists certain relationship (a rather common in science): One follows from other, and each enriches other.

参考文章(254)
RICHARD B. FAIR, Concentration Profiles of Diffused Dopants in Silicon Materials Processing: Theory and Practices. ,vol. 2, pp. 315- 442 ,(1981) , 10.1016/B978-0-444-86095-8.50012-4
J.M. Gibson, L.R. Dawson, Layered structures, epitaxy, and interfaces Materials Research Society,Pittsburgh, PA. ,(1985)
P. Fontaine, J. Marfaing, W. Marine, F. Salvan, B. Mutaftschiev, Instabilities of Crystallization in Amorphous Germanium Under Pulsed Laser Irradiation Springer Series in Chemical Physics. pp. 19- 24 ,(1984) , 10.1007/978-3-642-82381-7_3
Qian-Zhang Wu, Wan-Chun Tian, Qing-Han Chen, Crystal Growth and Characterization ,(1980)
Franklin F. Y. Wang, Impurity doping processes in silicon North-Holland Pub. Co. , Sole distributors for the USA and Canada, Elsevier North-Holland. ,(1981)
P. Hartman, Crystal growth : an introduction North-Holland Pub. Co. , American Elsevier. ,(1973)
Alloying, D. C. Jacobson, G. Foti, J. M. Poate, Surface Modification and Alloying: by Laser, Ion, and Electron Beams ,(1983)