作者: Takahira Miyagi , Masayuki Kamei , Takefumi Mitsuhashi , Atsushi Yamazaki
DOI: 10.1063/1.1606869
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摘要: An anatase TiO2 film was epitaxially grown on a conductive Nb-doped single-crystalline SrTiO3 (100) substrate by metalorganic chemical vapor deposition. RuO2 Schottky electrode fabricated the epitaxial reactive dc magnetron sputtering. The dark I–V and capacitance–voltage characteristics indicated good rectification thermal stability of RuO2/anatase junction. This junction enables stable measurements deep level transient spectroscopy in high-temperature region is promising to examine origins levels band gap anatase.