作者: Doo-Hyeb Youn , Young-Jun Yu , HongKyw Choi , Suck-Hwan Kim , Sung-Yool Choi
DOI: 10.1088/0957-4484/24/7/075202
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摘要: We report an improvement of the optical power and thermal stability GaN LEDs using a chemically doped graphene transparent conducting layer (TCL) low-resistance contact structure. In order to obtain low resistance between TCL p-GaN surface, patterned with Cr/Au electrodes is suggested. A bi-layer patterning method was utilized prevent from peeling off surface. To improve work function sheet graphene, CVD (chemical vapor deposition) by chemical treatment HNO3 solution. The effect on degradation at high injection current level investigated. addition, enhancement via increase in spreading decrease potential barrier