参考文章(18)
J.L. Hoyt, H.M. Nayfeh, S. Eguchi, I. Aberg, G. Xia, T. Drake, E.A. Fitzgerald, D.A. Antoniadis, Strained silicon MOSFET technology international electron devices meeting. pp. 23- 26 ,(2002) , 10.1109/IEDM.2002.1175770
Jean-Pierre Colinge, Silicon-on-Insulator Technology: Materials to VLSI ,(1991)
Yannis Tsividis, Operation and modeling of the MOS transistor ,(1987)
Stephen A. Campbell, The Science and Engineering of Microelectronic Fabrication ,(2001)
W. P. Maszara, G. Goetz, A. Caviglia, J. B. McKitterick, Bonding of silicon wafers for silicon‐on‐insulator Journal of Applied Physics. ,vol. 64, pp. 4943- 4950 ,(1988) , 10.1063/1.342443
D. P. Vu, M. Haond, D. Bensahel, M. Dupuy, Halogen lamp recrystallization of silicon on insulating substrates Journal of Applied Physics. ,vol. 54, pp. 437- 439 ,(1983) , 10.1063/1.331677
Yaocheng Liu, Michael D. Deal, James D. Plummer, High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates Applied Physics Letters. ,vol. 84, pp. 2563- 2565 ,(2004) , 10.1063/1.1691175
K. Kusukawa, M. Moniwa, M. Ohkura, E. Takeda, Enhancement of lateral solid phase epitaxy over SiO2 using a densified and thinned amorphous Si layer Applied Physics Letters. ,vol. 56, pp. 560- 562 ,(1990) , 10.1063/1.103301
Minjoo L. Lee, Eugene A. Fitzgerald, Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors Applied Physics Letters. ,vol. 83, pp. 4202- 4204 ,(2003) , 10.1063/1.1627469
S Gan, L Li, T Nguyen, H Qi, R.F Hicks, M Yang, Scanning tunneling microscopy of chemically cleaned germanium (100) surfaces Surface Science. ,vol. 395, pp. 69- 74 ,(1998) , 10.1016/S0039-6028(97)00608-0