Influence of film thickness on microstructural and electrical properties of copper oxide thin film prepared by magnetron sputtering
作者： N.W. Sangwaranatee , N. Sangwaranatee , M. Horprathum , C. Chananonnawathorn , E. Sustini
DOI: 10.1016/J.MATPR.2018.04.082
关键词:
摘要: Abstract In this present work, the copper oxide (CuO) thin films were deposited by dc reactive magnetron sputtering on silicon (100) wafer. The microstructural evolution of CuO investigated as a function film thickness at range 150 to 600 nm X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). optical transmittance was measured UV-VIS-NIR spectrophotometer. sheet resistances characterized four-point-probe measurement. results indicated that obtained polycrystalline. surface roughness showed an increasing with thickness. addition, relationship between thickness, morphology electrical property discussed in paper.
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