作者: Mariusz Drygas , Jerzy F. Janik , Leszek Czepirski
DOI: 10.2174/1573413711309030004
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摘要: A diverse pool of six semiconductor GaN nanopowders was synthesized by the thermally-driven pyrolysis gallium imide at various temperatures. The XRD-derived average crystallite sizes for were in range 1-17 nm. Standard nitrogen ad- sorption measurements 77 K yielded basic characteristics powder pore structures including BET surface areas that spanned 23-287 m 2 /g. Rare studies adsorption water vapor, carbon dioxide, and hydrogen on nitride carried out. data vapor 295 supported chemisorption molecules primary centers phy- sisorption secondary centers. dioxide 273 used to de- termine selectivity these gases defined as ratio respective Henry's constants calculated from Langmuir equation. showed remarkably structure properties could be linked nitride's size agglomeration, latter helium density data.