Adsorption Properties of Nanocrystalline/Nanoporous Gallium Nitride Powders

作者: Mariusz Drygas , Jerzy F. Janik , Leszek Czepirski

DOI: 10.2174/1573413711309030004

关键词:

摘要: A diverse pool of six semiconductor GaN nanopowders was synthesized by the thermally-driven pyrolysis gallium imide at various temperatures. The XRD-derived average crystallite sizes for were in range 1-17 nm. Standard nitrogen ad- sorption measurements 77 K yielded basic characteristics powder pore structures including BET surface areas that spanned 23-287 m 2 /g. Rare studies adsorption water vapor, carbon dioxide, and hydrogen on nitride carried out. data vapor 295 supported chemisorption molecules primary centers phy- sisorption secondary centers. dioxide 273 used to de- termine selectivity these gases defined as ratio respective Henry's constants calculated from Langmuir equation. showed remarkably structure properties could be linked nitride's size agglomeration, latter helium density data.

参考文章(24)
J. Borysiuk, P. Caban, W. Strupiński, S. Gierlotka, S. Stelmakh, J. F. Janik, TEM investigations of GaN layers grown on silicon and sintered GaN nano-ceramic substrates Crystal Research and Technology. ,vol. 42, pp. 1291- 1296 ,(2007) , 10.1002/CRAT.200711020
Jeffery L Coffer, Marc A Johnson, Libing Zhang, Richard L Wells, Jerzy F Janik, None, Influence of Precursor Route on the Photoluminescence of Bulk Nanocrystalline Gallium Nitride Chemistry of Materials. ,vol. 9, pp. 2671- 2673 ,(1997) , 10.1021/CM9705193
Mariusz Drygas, Zbigniew Olejniczak, Ewa Grzanka, Miroslaw M. Bucko, Robert T. Paine, Jerzy F. Janik, Probing the Structural/Electronic Diversity and Thermal Stability of Various Nanocrystalline Powders of Gallium Nitride GaN Chemistry of Materials. ,vol. 20, pp. 6816- 6828 ,(2008) , 10.1021/CM800645Q
Mariusz Drygas, Jerzy F. Janik, Modeling porosity of high surface area nanopowders of the gallium nitride GaN semiconductor Materials Chemistry and Physics. ,vol. 133, pp. 932- 940 ,(2012) , 10.1016/J.MATCHEMPHYS.2012.01.119
Isamu Akasaki, Hiroshi Amano, Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters Japanese Journal of Applied Physics. ,vol. 36, pp. 5393- 5408 ,(1997) , 10.1143/JJAP.36.5393
Wei-Qiang Han, Alex Zettl, Pyrolysis approach to the synthesis of gallium nitride nanorods Applied Physics Letters. ,vol. 80, pp. 303- 305 ,(2002) , 10.1063/1.1431401
Xiuling Li, Young-Woon Kim, Paul W. Bohn, Ilesanmi Adesida, In-plane bandgap control in porous GaN through electroless wet chemical etching Applied Physics Letters. ,vol. 80, pp. 980- 982 ,(2002) , 10.1063/1.1448860
Sylwester Furmaniak, Artur P. Terzyk, Roman Gołembiewski, Piotr A. Gauden, Leszek Czepirski, Searching the most optimal model of water sorption on foodstuffs in the whole range of relative humidity Food Research International. ,vol. 42, pp. 1203- 1214 ,(2009) , 10.1016/J.FOODRES.2009.06.004
Shuji Nakamura, InGaN-based blue light-emitting diodes and laser diodes Journal of Crystal Growth. ,vol. 201202, pp. 290- 295 ,(1999) , 10.1016/S0022-0248(98)01344-X
Mariusz Drygas, Miroslaw M. Bucko, Zbigniew Olejniczak, Izabella Grzegory, Jerzy F. Janik, High temperature chemical and physical changes of the HVPE-prepared GaN semiconductor Materials Chemistry and Physics. ,vol. 122, pp. 537- 543 ,(2010) , 10.1016/J.MATCHEMPHYS.2010.03.043