Experimental study of the energy-band structure of porous silicon.
作者： O. K. Andersen , E. Veje
DOI: 10.1103/PHYSREVB.53.15643
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sci-hub.se 参考文章(45)
C Pickering, M I J Beale, D J Robbins, P J Pearson, R Greef, Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon Journal of Physics C: Solid State Physics. ,vol. 17, pp. 6535- 6552 ,(1984) , 10.1088/0022-3719/17/35/020
L. T. Canham, Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers Applied Physics Letters. ,vol. 57, pp. 1046- 1048 ,(1990) , 10.1063/1.103561
A. Uhlir, Electrolytic Shaping of Germanium and Silicon Bell System Technical Journal. ,vol. 35, pp. 333- 347 ,(1956) , 10.1002/J.1538-7305.1956.TB02385.X
D.J. Lockwood, Optical properties of porous silicon Solid State Communications. ,vol. 92, pp. 101- 112 ,(1994) , 10.1016/0038-1098(94)90863-X
G. Bomchil, A. Halimaoui, I. Sagnes, P.A. Badoz, I. Berbezier, P. Perret, B. Lambert, G. Vincent, L. Garchery, J.L. Regolini, Porous silicon: material properties, visible photo- and electroluminescence Applied Surface Science. pp. 394- 407 ,(1993) , 10.1016/0169-4332(93)90692-5
S. S. Iyer, Y. -H. Xie, Light Emission from Silicon Science. ,vol. 260, pp. 40- 46 ,(1993) , 10.1126/SCIENCE.260.5104.40
S.M. Prokes, O.J. Glembocki, Light emission properties of porous silicon Materials Chemistry and Physics. ,vol. 35, pp. 1- 10 ,(1993) , 10.1016/0254-0584(93)90167-K
V. Lehmann, U. Gösele, Porous silicon formation: A quantum wire effect Applied Physics Letters. ,vol. 58, pp. 856- 858 ,(1991) , 10.1063/1.104512
R.A. Street, Luminescence in amorphous semiconductors Advances in Physics. ,vol. 25, pp. 397- 453 ,(1976) , 10.1080/00018737600101412
S. M. Prokes, O. J. Glembocki, V. M. Bermudez, R. Kaplan, L. E. Friedersdorf, P. C. Searson, SiHx excitation: An alternate mechanism for porous Si photoluminescence. Physical Review B. ,vol. 45, pp. 13788- 13791 ,(1992) , 10.1103/PHYSREVB.45.13788