Resonant charging and stopping power of slow channelling atoms in a crystalline metal

摘要: Fast moving ions travel great distances along channels between low-index crystallographic planes, slowing through collisions with electrons, until finally they hit a host atom initiating cascade of atomic displacements. Statistical penetration ranges incident particles are reliably used in ion-implantation technologies, but full, necessarily quantum-mechanical, description the stopping slow, heavy is challenging and results experimental investigations not fully understood. Using self-consistent model electronic structure metal, explicit treatment structure, we find by direct simulation resonant accumulation charge on channelling ion analogous to Okorokov effect originating excitation delocalized localized valence states its transient neighbours, stimulated time-periodic potential experienced ion. The resonance reduces power These surprising interesting new chemical aspects channelling, which cannot be predicted within standard framework travelling homogeneous electron gases or considering either target isolation.