Method for establishing noise equivalent circuit model of InP HEMT device
作者： Li Shaojun , Li Miao , Lyu Hongliang , Zhang Yuming , Qiao Shixing
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摘要: The invention relates to a method for establishing noise equivalent circuit model of an InP HEMT (High Electron Mobility Transistor) device, which comprises the following steps of: small-signal with representation channel distribution effect and substrate loss effect, extracting parameters; adding current source small signal obtain circuit; characterizing parameters obtaining cascade correlation matrix performing parasitic parameter de-embedding on intrinsic admittance matrix; accordingto embedding into device model. According method, imaginary component is introduced coefficient represent meanwhile, factor so that fitting precision under high frequency improved.
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