Composite barrier/etch stop layer comprising oxygen doped SiC and SiC for interconnect structures
作者： Koh Yee Wee , Liu Huang , John Sudijono
DOI:
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摘要: A dual damascene structure comprising a composite barrier/etch stop layer including lower silicon carbide (SiC) and an upper first oxygen doped SiC formed over substrate is provided. dielectric the followed by second etch layer, layer. An opening with via overlying trench extends through at least portion of The filled diffusion barrier metal
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