Group iii nitride semiconductor optical device, epitaxial substrate, and method of making group iii nitride semiconductor light-emitting device
作者： Yohei Enya , Takashi Kyono , Yusuke Yoshizumi , Masaki Ueno
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摘要: A group III nitride semiconductor optical device includes: a substrate comprising semiconductor; first group-III region on primary surface of the substrate; second and an active layer between region. The tilts at tilt angle in range 63 degrees to smaller than 80 toward m-axis from plane perpendicular reference axis extending along c-axis semiconductor. region, layer, are arranged direction normal substrate. is configured produce light having wavelength 580 nm 800 nm. includes epitaxial gallium based containing indium as element. has content ranging 0.35 0.65. axis. oriented either [0001] or [000−1]
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