Development of a new Schiff-base semiconducting material for thin film active device and analysis of its charge transport mechanism

摘要: Schiff-base compounds have rarely been employed in optoelectronics. Herein, we report the optical and electrical properties of a compound, 1,4-bis-(quinolin-6-yl iminomethyl)benzene (BQB), detail. The BQB studied with thin film made it. results conductivity measurement band gap encouraged us to examine its potential application metal (Al)-semiconductor Schottky diode. I–V ITO/BQB/Al configuration illustrated behavior moderate rectification ratio at applied bias ±1.0 V. characteristic diode parameters were obtained. device showed good ideality factor 1.2 low barrier height 0.44 eV. Charge transport through semiconductor junction, which is critical for performance, analyzed by space charge-limited current theory. In this regard, mobility–lifetime product, carrier density, density states Fermi level diffusion length was estimated. show that new compound has successful device.