Effect of nitric-phosphoric acid etches on material properties and back-contact formation of CdTe-based solar cells
作者： Xiaonan Li , David W. Niles , Falah S. Hasoon , Richard J. Matson , Peter Sheldon
DOI: 10.1116/1.581651
关键词:
摘要: Forming a low-resistance contact to p-type CdTe is critical issue for successful commercialization of CdTe-based photovoltaic devices. One solution this problem has been incorporate surface pretreatments facilitate formation. In article, the effects nitric–phosphoric (NP) acid pretreatment on material properties and device performance are investigated polycrystalline We demonstrate that NP pretreatment, when applied thin films, forms thick, highly conductive Te layer back film exposed grain boundaries. When etched under optimal conditions, results in CdS/CdTe devices with reduced series resistance enhanced performance. On other hand, we find etch preferentially etches Overetching can result complete failure by forming shunt paths extend heterointerface. Therefore, carefully controlling concentration duration optimi...
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