The role of impurities in III/V semiconductors grown by organometallic vapor phase epitaxy

作者: G.B. Stringfellow

DOI: 10.1016/0022-0248(86)90229-0

关键词:

摘要: … centration and capture cross section of the deep interest even in the most important Ill/V corn… ties in OMVPE GaAsbased on the dependence of behavior of Se doping is consistent with …

参考文章(24)
G. B. Stringfellow, G. Hom, Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE Applied Physics Letters. ,vol. 34, pp. 794- 796 ,(1979) , 10.1063/1.90647
E. E. Wagner, G. Horn, G. B. Stringfellow, Growth of High-Quality AlxGa1−xAs By OMVPE for laser devices Journal of Electronic Materials. ,vol. 10, pp. 239- 253 ,(1981) , 10.1007/BF02654911
R.W. Glew, Zinc Doping of MOCVD GaAs Journal of Crystal Growth. ,vol. 68, pp. 44- 47 ,(1984) , 10.1016/0022-0248(84)90395-6
G. B. Stringfellow, Electron mobility in AlxGa1−xAs Journal of Applied Physics. ,vol. 50, pp. 4178- 4183 ,(1979) , 10.1063/1.326445
P. Rai-Choudhury, Epitaxial Gallium Arsenide from Trimethyl Gallium and Arsine Journal of The Electrochemical Society. ,vol. 116, pp. 1745- 1746 ,(1969) , 10.1149/1.2411694
G.B. Stringfellow, C.C. Hsu, J.S. Yuan, R.M. Cohen, Doping studies for InP grown by organometallic vapor phase epitaxy Journal of Crystal Growth. ,vol. 74, pp. 535- 542 ,(1986) , 10.1016/0022-0248(86)90199-5
S.D. Hersee, M.A. Di Forte-Poisson, M. Baldy, J.P. Duchemin, A new approach to the ``gettering'' of oxygen during the growth of GaAlAs by low pressure MOCVD Journal of Crystal Growth. ,vol. 55, pp. 53- 57 ,(1981) , 10.1016/0022-0248(81)90270-0
B. J. Skromme, T. S. Low, T. J. Roth, G. E. Stillman, J. K. Kennedy, J. K. Abrokwah, Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE Journal of Electronic Materials. ,vol. 12, pp. 433- 457 ,(1983) , 10.1007/BF02651142
D.J. Ashen, P.J. Dean, D.T.J. Hurle, J.B. Mullin, A.M. White, P.D. Greene, The incorporation and characterisation of acceptors in epitaxial GaAs Journal of Physics and Chemistry of Solids. ,vol. 36, pp. 1041- 1053 ,(1975) , 10.1016/0022-3697(75)90043-8