Temperature evolution during scanning electron beam processing of silicon
作者： M. Cervera , J. Martínez , J. Garrido , J. Piqueras
DOI: 10.1007/BF01567116
关键词:
摘要: Temperature profile evolutions produced by a scanning electron beam in crystalline silicon have been numerically calculated using two-dimensional finite-element scheme. The temperature dependence of the different properties as well penetration effects taken into account. Numerical calculations carried out at conditions compared with experimental melting-threshold measurements an Gaussian power density distribution. good agreement between numerical and results proves validity approach.
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