Effects of Nb doping on switching-voltage stability of zinc oxide thin films
作者： Cheng-Ying Li , Chun-Cheng Lin , Sheng-Yuan Chu , Jun-Ting Lin , Chih-Yu Huang
DOI: 10.1063/1.5140027
关键词:
摘要: Nb-doped ZnO (NbxZn1−xO, NZO) thin films with various Nb additions (x = 0, 0.2, 0.5, and 0.8 at. %) were deposited on Pt/TiO2/SiO2/Si substrates by radio frequency magnetron sputtering. The doping concentration was found to affect the microstructure, number of oxygen vacancies, work function Pt/NZO/Pt structures. Among devices, film 0.5 at. % addition showed a better switching-voltage stability [i.e., optimal coefficient variation (Cv) for reset (7.02%) set (2.73%) operations, respectively], high endurance (∼1000 cycles), lower (0.57 V) (1.83 V) voltages due larger vacancies function. In general, results show that present NZO are promising candidates stable low power-consumption resistive random access memory applications.
scitation.org
sci-hub.st 参考文章(41)
Xun Cao, Xiaomin Li, Xiangdong Gao, Xinjun Liu, Chang Yang, Rui Yang, Ping Jin, All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature Journal of Physics D. ,vol. 44, pp. 255104- ,(2011) , 10.1088/0022-3727/44/25/255104
J. W. Xu, H. Wang, M. H. Jiang, X. Y. Liu, Properties of Nb-doped ZnO transparent conductive thin films deposited by rf magnetron sputtering using a high quality ceramic target Bulletin of Materials Science. ,vol. 33, pp. 119- 122 ,(2010) , 10.1007/S12034-010-0016-X
V. Gokulakrishnan, S. Parthiban, K. Jeganathan, K. Ramamurthi, Structural, Optical, and Electrical Properties of Nb-Doped ZnO Thin Films Prepared by Spray Pyrolysis Method Journal of Electronic Materials. ,vol. 40, pp. 2382- 2387 ,(2011) , 10.1007/S11664-011-1755-1
Sunghoon Lee, Heedo Na, Jonggi Kim, Jiwon Moon, Hyunchul Sohn, Anion-Migration-Induced Bipolar Resistance Switching in Electrochemically Deposited TiOx Films Journal of The Electrochemical Society. ,vol. 158, ,(2011) , 10.1149/1.3516464
Francisco Jimenez-Molinos, Marco A. Villena, Juan B. Roldan, Andres M. Roldan, A SPICE Compact Model for Unipolar RRAM Reset Process Analysis IEEE Transactions on Electron Devices. ,vol. 62, pp. 955- 962 ,(2015) , 10.1109/TED.2014.2387429
P.-T. Hsieh, Y.-C. Chen, K.-S. Kao, C.-M. Wang, Luminescence mechanism of ZnO thin film investigated by XPS measurement Applied Physics A. ,vol. 90, pp. 317- 321 ,(2007) , 10.1007/S00339-007-4275-3
Kenji Ishikawa, Nagaya Okada, Kazumasa Takada, Takashi Nomura, Minoru Hagino, Koichi Toyoda, Initial Stage of Growth Process of Lead Titanate Fine Particles Japanese Journal of Applied Physics. ,vol. 33, pp. 5412- 5415 ,(1994) , 10.1143/JJAP.33.5412
A. Fet, V. Häublein, A. J. Bauer, H. Ryssel, L. Frey, Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping Applied Physics Letters. ,vol. 96, pp. 053506- ,(2010) , 10.1063/1.3303976
O Lozano, QY Chen, PV Wadekar, HW Seo, PV Chinta, LH Chu, LW Tu, Ikai Lo, SW Yeh, NJ Ho, FC Chuang, DJ Jang, D Wijesundera, Wei-Kan Chu, None, Factors limiting the doping efficiency of transparent conductors: A case study of Nb-doped In2O3 epitaxial thin-films Solar Energy Materials and Solar Cells. ,vol. 113, pp. 171- 178 ,(2013) , 10.1016/J.SOLMAT.2013.02.006
D. L. Xu, Y. Xiong, M. H. Tang, B. W. Zeng, Y. G. Xiao, Bipolar and unipolar resistive switching modes in Pt/Zn0.99Zr0.01O/Pt structure for multi-bit resistance random access memory Applied Physics Letters. ,vol. 104, pp. 183501- ,(2014) , 10.1063/1.4875383