Strong Red Photoluminescence from Nano-porous Silicon Formed on Fe-Contaminated Silicon Substrate
作者： Dong-Lyeul Kim , Dong-Yul Lee , In-Ho Bae , None
DOI: 10.4313/TEEM.2004.5.5.194
关键词:
摘要: The influences of the deep-level concentration p-type Si substrates on optical properties nano-porous silicon (PS) are investigated by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Utilizing a substrate with Fe contaminations significantly enhanced PL intensity PS. All PS samples formed Fe-contaminated had stronger yield than that reference without any intentional contamination but emission peak is not changed. For 1000 sample 1,000 ppb, maximum showed about ten times sample. From DLTS results, efficiency strongly depends Fe-related trap in substrates.
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