Modulation of band gap by normal strain in SiC-based heterostructures
作者： M. Luo , Y.E. Xu , Y.X. Song
DOI: 10.1016/J.IJLEO.2017.10.044
关键词:
摘要: Abstract The structure and electronic properties of Ge/SiC van der Waals (vdW) heterostructures under the influence normal strain have been investigated by first-principles method. Without a strain, system shows small band gap 126 meV. By applying monotonically decreases from to 0 meV. Our results reveal that compressive has much on bilayer. variations are owing different states Ge, Si, C atoms in conduction valence band. Moreover, electrons among vdW likely transfer germanene SiC monolayer due deeper potential monolayer. predicted tunable is very promising for its use nanodevices.
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