作者: Ralph Paetzold , Karsten Heuser , Debora Henseler , Stephan Roeger , Georg Wittmann
DOI: 10.1063/1.1574400
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摘要: Organic light-emitting diodes were fabricated on a 125-μm-thick polyethylene terephthalate substrate covered with 100 nm indium tin oxide. The luminance–current–voltage performance and the emission spectrum of devices are investigated in bent state under mechanical stress at different bending radii. Down to curvature 15 mm, no significant decrease device is found compared relaxed state, as well conventional glass substrates.