Three-dimensional simulation studies on electrostatic predictions for carbon nanotube field effect transistors
作者： P-Y Chen , Y-L Shao , K-W Cheng , K-H Hsu , J-S Wu
DOI: 10.1016/J.CPC.2007.06.016
关键词:
摘要: Analysis of the electrostatic characteristics and gate capacitance typical nanostructured carbon nanotube field effect transistors (CNTFETs) were performed numerically. A previously developed parallelized Poisson's equation solver (PPES) is employed, coupled with a parallel adaptive mesh refinement (PAMR) to improve numerical accuracy near region where variation potentials are significant. CNTFETs four configurations electrode, bottom (BG), double (DG), top (TG), surrounding (SG) simulated. Effects arrangement length on presented discussed. The simulation results show that SG-CNTFET possesses largest among various structures. However, TG-CNTFET recommended for practical applications by taking into account both device performance difficulty fabrication. According simulated capacitance, estimation on-state current possible.
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