作者: Haebum Lee , S. Simon Wong , Sergey D. Lopatin
DOI: 10.1063/1.1555274
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摘要: Electroplated Cu films with different plating conditions and thicknesses are characterized to study the stress texture evolution involved in transition of microstructure during self-annealing. Grain growth process induces film tensile direction. Degradation (111) enhancement (200) observed microstructural transition. The rate self-annealing increases dramatically as current density increases. Self-annealing is significantly retarded thinner plated pulse reverse current. A strong correlation between development demonstrated for all electroplated under self- thermal annealing conditions. This explained by surface/interface energy strain anisotropic metal films. Due mechanical anisotropy Cu, orientation lowest total changes from dominant ...