RF IV waveform engineering applied to VSWRsweeps and RF stress testing

摘要: This thesis looks at how the Radio Frequency (RF) waveform measurement and engineering techniques developed for Power Amplifier (PA) design can be used to investigate RF reliability. Within this area two major themes are concentrated on – firstly effect of a load impedance mismatch secondly an investigation into using IV system stress testing. The initial aim work was potential removing the output protection isolator from PA. It seen that in doing so there is the cause impedance mismatch, which results portion of the power produced being reflected back. shown conditions that could presented device as result mismatch can found by performing Voltage Standing Wave Ratio (VSWR) sweep. The worst possible case scenario VSWR sweep, when all is back, split three regions. One high RF drain voltage swings, one drain currents transition region of simultaneously swings. Each these regions presents different operating conditions device, turn different stresses. The second part concentrates into Gallium Nitride (GaN) Heterostructure Field Effect Transistor (HFET) reliability, specifically if waveform measurement used to provide detailed information about state during stress testing. A testing procedure allow this, which featured both DC characterisation measurements before after every period. made the characterisation stages only gives representation degradation seen in same