Effect of Nitrogen doping on the electronic transport of zigzag MoS2 nanoribbons
作者： Meng Wang , Xiaoyue He , Minghui Shen , Lan Yang , Yanyan Shi
DOI: 10.1016/J.PHYSE.2020.114039
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摘要: Abstract Two-dimensional materials have attracted extensive attention in many applications. Based on the first-principles technique, we investigate electronic transport properties of zigzag MoS2 nanoribbons (Z-MoS2NRs) which S atom is substituted by N at three different positions. By calculating formation energy, find that S-edge Z-MoS2NR can be more easily replaced atom. The ground state perfect changed when doped. Besides, relationship between current and voltage demonstrate Z-MoS2NRs with doping or center still show negative differential resistance (NDR) effect. impact positions spin-up spin-down currents bias varies within a certain range.
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