Dielectric response, impedance spectroscopy and scaling behavior of K-doped Y2/3Cu3Ti4O12 ceramics
作者： Pengfei Liang , Xiaolian Chao , Zupei Yang
DOI: 10.1016/J.MATCHEMPHYS.2015.10.016
关键词:
摘要: Abstract The K-doped Y 2/3 Cu 3 Ti 4 O 12 system was prepared and investigated. K doping is of great benefit to the growth grain size. Proper amount substitution in ceramics makes dielectric loss significantly decreased. Very large e r ∼1.1 × 10 relatively low tan δ ∼2.6% are simultaneously observed for samples with x = 0.020 0.035 when measured at ∼10 kHz. lowered closely associated enhanced localized behavior conduction process boundary. relaxation behaviors boundary become much more difficult after doping. Impedance analysis suggests that same entities responsible Scaling indicate physical nature their independent measurement temperature.
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