Fast Neutron Detection With 4H-SiC Based Diode Detector up to 500 °C Ambient Temperature

作者: D. Szalkai , R. Ferone , F. Issa , A. Klix , M. Lazar

DOI: 10.1109/TNS.2016.2522921

关键词:

摘要: In the framework of European I-Smart project, optimal 4H-SiC based diode geometries were developed for high temperature neutron detection. Irradiation tests conducted with 14 MeV fast neutrons supplied by a deuterium-tritium generator an average yield $4.04 \times {10^{10}} - 5.25 {10^{10}}\;\hbox{n/s}$ at Neutron Laboratory Technical University Dresden in Germany. this paper, we interpret first measurements and results detector irradiated from room up to 500 °C. These experiments are serving also simulation harsh environmental condition tritium breeding blanket ITER fusion reactor, which is one most prominent planned location flux characterization studies near future.

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