A novel approach for highly linear automatic gain control of a hemt small-signal amplifier
作者： Emigdio Malaver , Antonio Tazon , José Angel Garcia , Angel Mediavilla
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摘要: A novel approach for highly linear automatic gain control (AGC) in small-signal ampli¯ers is presented this paper. HEMT based topology was implemented, biasing the transistor transition between saturated and operation regions. Gain with low distortion achieved by simultaneous adjustments of gate to source (Vgs) drain (Vds) voltages, along line where second derivative transconductance (Gm3) has a null. Comparatively traditional approach, biased region, ampli¯er better intermodulation behavior e±ciency, without important reduction range.
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