Local bonding arrangements of boron in doped hydrogenated amorphous silicon

摘要: Analysis of boron‐11 NMR linewidths in films boron‐doped hydrogenated amorphous silicon yields structural information concerning coordination and nearest‐neighbor bonding the dopant atoms. A heavily doped (10 at. %, B) film exhibits two distinct boron sites, both them being threefold coordinated. second sample containing 0.7 at.% B shows only one site, also Annealing studies latter suggest formation B‐Si bonds as hydrogen is driven off. The 11B linewidth a compensated (containing % 0.6 P) comparable to that uncompensated sample. spin‐spin relaxation (T2) measurements indicate sites are clustered all three materials.