The Gas/Oxide Interface and the Oxidation of Metals

摘要: Attention is drawn to the importance of structure surface layer oxygen adsorbed at oxide/oxygen interface in determining laws growth thin oxide films on metals. Recent work chemisorption by alumina and cuprous indicates that a saturated chemisorbed formed even high temperatures pressures well below those used oxidation studies. In attempting take this into account current theory metal two models are discussed. The simplest assumes outer growing film completely covered with ions, it shown that, case, linear law may be obtained though migration ions through rate-determining. A more complex picture developed for p -type oxides according which bound an attendant valence change so neutral pairs formed. Some these converted electron transfer from underlying metal. This model leads already familiar, namely cubic logarithmic very films. Particular attention paid predicted pressure dependence rate some experimental results aluminium copper