Toward silicon-based longwave integrated optoelectronics (LIO)

摘要: The vision of longwave silicon photonics articulated in the Journal Optics A, vol. 8, pp 840-848, 2006 has now come into sharper focus. There is evidence that newly designed silicon-based optoelectronic circuits will operate at any wavelength within wide 1.6 to 200 μm range. Approaches LWIR operation are reviewed here. A long-range goal manufacture OEIC chips a foundry by integrating photonics on-chip with CMOS, bipolar, or BiCMOS micro-electronics. principal application now emerging sensing chemical and biological agents an OE laboratory-on-a-chip. Regarding on-chip IR sources, hybrid evanescent-wave integration III-V interband-cascade lasers quantum-cascade lasers on (or Ge/Si) waveguides promising technique, although alternative all-group-IV solution is presently taking shape form Ge/SiGeSn band-to-band inter-subband lasers. There is plenty room for creativity developing complete suite components. Materials modification, device innovation, scaling waveguide dimensions are needed implement microphotonic, plasmonic and photonic-crystal devices, both active passive. Such innovation will likely lead significant LIO applications.