Analysis of ${\rm P}_{b}$ Centers in Ultrathin Hafnium Silicate Gate Stacks
作者： S.B.F. Sicre , M.M.. De Souza
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摘要: A "kink" in the capacitance-voltage (C-V) characteristics of MOS capacitors with an ultrathin interfacial layer 7-8 ? a hafnium silicate gate dielectric is analyzed via high-low frequency C-V and quantum-mechanical calculations. Hole electron traps (amphoteric) energy levels determined at Ev+0.44 eV Ev+0.89 are surmised to be Pb1 Pb0 centers, respectively. Of these two defects, those lower half bandgap cause asymmetric kink that can further attributed additional level Ev+0.32 eV, corresponding centers. With reducing temperatures, peaks move toward band edge increasing magnitude, consistent multiphonon emission models capture behavior.
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