Surface and optical characterization of the porous silicon textured surface
作者： P. N. Vinod , M. Lal
DOI: 10.1007/S10854-005-4949-6
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摘要: In the present studies, structural and optical properties of electrochemically etched PS layers are presented. The formation conditions under constant anodization current density was varied to get a variety samples analyze characteristics porous silicon and, then correlate resultant surface morphology with etching process. low-porosity thus formed on substrate have refractive index value (nps = 1.9), which is an intermediate between bulk (nSi 3.4) air (nair 1.0). results diffused reflectance, by atomic force microscopy (AFM), Raman scattering measurements show that consist irregular randomly distributed nanocrystalline Si structures. reduction in reflection low porosity due light trapping incoming total randomization within structure. Fourier transform infrared (FTIR) layer characterized chemical species like Si—H Si—O etc., co-existing surface. presence hydrogen-related can provide some extent passivation effect.
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