Ferroelectric Bloch-line switching: A paradigm for memory devices?

摘要: Vortices inside polar domain walls in ferroelastic materials can form ordered arrays resembling Bloch-lines magnets. The Bloch lines are energetically degenerate with dipoles oriented perpendicular to the wall. By symmetry, these at +90° or −90° relative wall dipoles. These two states have same energy and be inverted by modest applied electric fields. As majority of wall, line vortex, weak depolarization fields exist for but not lines. density depends on twin elastic anisotropy crystal structure. We estimate that distances between boundaries as small 50 nm some densities 100 an area × 100 nm2. local dipole moment is equivalent displacement Ti BaTiO3. Switchable detected their macroscopic constitute functional part a memory device.